Semiconductor device with an insulating film separating conducti

Details Semiconductor device with an insulating film separating conducti Semiconductor device with an insulating film separating conducti

1990-11-23

1997-07-29

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257323, 257641, H01L 29788

Patent

active

056524498

ABSTRACT:
A semiconductor device comprises a lower conductive layer formed on a semiconductor substrate, a first insulation film layer formed at least on side faces of the lower conductive layer, a second insulation film layer formed around the lower conductive layer on which the first insulation film layer has been formed, a contact hole formed on the second insulation film layer in the vicinity of a side face of the lower conductive layer, and an upper conductive layer formed in the contact hole and over the second insulation film. The first insulation film layer is of a three-film structure comprising a first oxide film, a nitride film and a second oxide film.

REFERENCES:
patent: 3996657 (1976-12-01), Simko et al.
patent: 4169270 (1979-09-01), Hayes
patent: 4203158 (1980-05-01), Frohman-Bentchkowsky et al.
patent: 4271582 (1981-06-01), Shirai et al.
patent: 4426764 (1984-01-01), Kosa et al.
patent: 4638342 (1987-01-01), Iyer
patent: 4714951 (1987-12-01), Baudrant et al.
patent: 4740484 (1988-04-01), Horstroem et al.
patent: 4982250 (1991-01-01), Manor, II et al.
S. Mori, et al; "1984 Symposium on VLSI Technology". Poly-Oxide / Nitride/Oxide Structure for Highly Reliable EPROM Cells Sep., 1984, pp. 40-41.

Affiliated with

Also associated with

Rating

Semiconductor device with an insulating film separating conducti does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with an insulating film separating conducti, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with an insulating film separating conducti will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-635569