Semiconductor device with an enhancement type field effect...

Details Semiconductor device with an enhancement type field effect... Semiconductor device with an enhancement type field effect...

2007-04-24

2007-04-24

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

10747149

ABSTRACT:
An enhancement mode field effect transistor whose operation threshold value varies greatly according to the substrate voltage. This field effect transistor is implemented by substituting the gate electrode of a depression mode field effect transistor for a gate electrode of the conductivity type opposite to that of a channel formation region, or a midgap gate electrode. In a preferred embodiment of the present invention, this field effect transistor is provided between a CMOS structure logic gate and a ground line. As a result, the leak current when the field effect transistor is not operating can be diminished without reducing the operational speed of the logic gate.

REFERENCES:
patent: 6043536 (2000-03-01), Numata et al.
patent: 6410966 (2002-06-01), Takahashi et al.
patent: 63-055975 (1988-03-01), None
patent: 63-156352 (1988-06-01), None
patent: 05-268027 (1993-10-01), None
patent: 06-013606 (1994-01-01), None
patent: 2001-274382 (2001-10-01), None

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