Semiconductor device with an elevated bonding pad

Details Semiconductor device with an elevated bonding pad Semiconductor device with an elevated bonding pad

1993-09-22

1995-02-28

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Configuration or pattern of bonds

257758, 257784, H01L 2348, H01L 23485, H01L 2954

Patent

active

053940130

ABSTRACT:
A bonding pad comprises a central film and a peripheral film. The peripheral film is formed around the central film, including a film formed at the same time as the central film, and being continuous with the central film. The level of the central film is made equal to or higher than the level of a protective film on the peripheral film by central film raising means. Therefore, even if the wire moves in a lateral direction when the tip of a wire is pressed against the central film, the tip of the wire does not collide with the protective film. Accordingly, it is possible to avoid the case where cracks are generated in the surface protecting film during wire bonding because of a lateral movement of the wire.

REFERENCES:
patent: 4617193 (1986-10-01), Wu

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