Semiconductor device with an analog capacitor

Details Semiconductor device with an analog capacitor Semiconductor device with an analog capacitor

2007-10-09

2007-10-09

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S316000, C438S257000, C438S593000

Reexamination Certificate

active

11145460

ABSTRACT:
A method for manufacturing a semiconductor device that comprises forming an oxide layer over a substrate. A polysilicon layer is disposed outwardly from the oxide layer, wherein the polysilicon layer forms a floating gate. A PSG layer is disposed outwardly from the polysilicon layer and planarized. The device is pattern etched to form a capacitor channel, wherein the capacitor channel is disposed substantially above the floating gate formed from the polysilicon layer. A dielectric layer is formed in the capacitor channel disposed outwardly from the polysilicon layer. A tungsten plug operable to substantially fill the capacitor channel is formed.

REFERENCES:
patent: 4811076 (1989-03-01), Tigelaar et al.
patent: 5376572 (1994-12-01), Yang et al.
patent: 6037625 (2000-03-01), Matsubara et al.
patent: 6117732 (2000-09-01), Chu et al.
patent: 6495419 (2002-12-01), Ahmed et al.
patent: 6569740 (2003-05-01), Smith
Wolf, S., “Silicon Processing for the VLSI Era,” vol. 2—Process Integration, 1990, section 4.4.1,2, pp. 201-204 and section 4.5.4.2, pp. 247-251.

Affiliated with

Also associated with

Rating

Semiconductor device with an analog capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with an analog capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with an analog capacitor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3849608