Semiconductor device with a voltage detecting device to...

Details Semiconductor device with a voltage detecting device to... Semiconductor device with a voltage detecting device to...

2006-05-23

2006-05-23

Le, Don (Department: 2819)

Electronic digital logic circuitry

Integrated injection logic

C326S080000, C326S081000

Reexamination Certificate

active

07049850

ABSTRACT:
An HNMOS transistor (4) has its drain electrode connected to the gate electrode of an NMOS transistor (21), and a logic circuit voltage (VCC) is applied to the drain electrode of the NMOS transistor (21) through a resistor (32). A ground potential is applied to the source electrode of the NMOS transistor (21). A drain potential (V2) at the NMOS transistor (21) is monitored by an interface circuit (1), for indirectly monitoring a potential (VS). Thus provided is a high voltage integrated circuit for preventing damage to a semiconductor device used for performing bridge rectification of a power line.

REFERENCES:
patent: 4292642 (1981-09-01), Appels et al.
patent: 5304870 (1994-04-01), Nagasawa
patent: 5455439 (1995-10-01), Terashima et al.
patent: 5506535 (1996-04-01), Ratner
patent: 5907182 (1999-05-01), Terashima
patent: 6373285 (2002-04-01), Konishi
patent: 6774674 (2004-08-01), Okamoto et al.
patent: 9-172358 (1997-06-01), None

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