Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2005-10-25
2008-03-04
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S773000, C438S700000
Reexamination Certificate
active
07339273
ABSTRACT:
The invention is directed to a semiconductor device having a penetrating electrode and a manufacturing method thereof in which reliability and a yield of the semiconductor device are enhanced. A semiconductor substrate is etched to form a via hole from a back surface of the semiconductor substrate to a pad electrode. This etching is performed under an etching condition such that an opening diameter of the via hole at its bottom is larger than a width of the pad electrode. Next, a second insulation film is formed on the back surface of the semiconductor substrate including in the via hole16, exposing the pad electrode at the bottom of the via hole. Next, a penetrating electrode and a wiring layer are formed, being electrically connected with the pad electrode exposed at the bottom of the via hole16. Furthermore, a protection layer and a conductive terminal are formed. Finally, the semiconductor substrate is cut and separated in semiconductor dies by dicing.
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Microchip Fabrication, Peter Van Zant, McGraw-Hill, Fourth Edition, pp. 402-403.
Kameyama Kojiro
Suzuki Akira
Umemoto Mitsuo
Kanto Sanyo Semiconductors Co., Ltd.
Lopez-Esquerra Andres
Morrison & Foerster LLP.
Sanyo Electric Co,. Ltd.
Vu David
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