Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
2007-11-13
2007-11-13
Potter, Roy (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
C257S618000
Reexamination Certificate
active
11465547
ABSTRACT:
A semiconductor device with a thinned semiconductor chip and a method for producing the latter is disclosed. In one embodiment, the thinned semiconductor chip has a top side with contact areas and a rear side with a rear side electrode. In this case, the rear side electrode is cohesively connected to a chip pad of a circuit carrier via an electrically conductive layer. In another embodiment, the thinned semiconductor chips of this semiconductor device according to the invention have low-microdefect edge side regions with semiconductor element structures and edge sides patterned by etching technology.
REFERENCES:
patent: 5851928 (1998-12-01), Cripe et al.
patent: 6700193 (2004-03-01), Shimanuki
patent: 7211900 (2007-05-01), Shin et al.
patent: 2002/0158345 (2002-10-01), Hedler et al.
patent: 2005/0205979 (2005-09-01), Shin et al.
patent: 10048881 (2002-03-01), None
patent: 10054038 (2002-05-01), None
patent: 10120408 (2002-10-01), None
patent: 102004009742 (2005-09-01), None
Bauer Michael
Heitzer Ludwig
Pohl Jens
Strobel Peter
Stuempfl Christian
Dicke Billig & Czaja, PLLC
Infineon - Technologies AG
Potter Roy
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