Semiconductor device with a reduced band gap and process

Details Semiconductor device with a reduced band gap and process Semiconductor device with a reduced band gap and process

2008-08-19

2010-12-28

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S329000, C257S330000, C257S331000, C257S332000

Reexamination Certificate

active

07859051

ABSTRACT:
The application relates to a semiconductor device made of silicon with regionally reduced band gap and a process for the production of same. One embodiment provides a semiconductor device including a body zone, a drain zone and a source zone. A gate extends between the source zone and the drain zone. A reduced band gap region is provided in a region of the body zone, made of at least ternary compound semiconductor material.

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Fan, X. “SiGeC/Si superlattice microcoolers”, Appl. Phys. Letters, vol. 78, Mar. 2001.

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