Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – Mesa structure
Reexamination Certificate
2006-02-07
2008-08-05
Chambliss, Alonzo (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
Mesa structure
C257S774000, C257S786000, C257SE23037, C361S767000, C438S612000
Reexamination Certificate
active
07408241
ABSTRACT:
A semiconductor device with surface-mountable outer contacts and to a process for producing it is disclosed. In one embodiment, surface-mountable outer contacts are arranged on outer contact connection surfaces on the underside of the semiconductor device. In their respective center region, the outer contact connection surfaces have at least one recess which has a dovetail-like profile, the areal extent of the recess being smaller than the maximum cross section of an outer contact. In a one process, the recess in the center region is achieved by selective deposition of correspondingly patterned metal layers.
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Bauer Michael
Escher-Poeppel Irmgard
Fuergut Edward
Jerebic Simon
Woerner Holger
Chambliss Alonzo
Dicke Billig & Czaja, PLLC
Infineon - Technologies AG
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