Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-02-24
2000-06-20
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257316, H01L 29788
Patent
active
060780754
ABSTRACT:
A very thin gate oxide is preferably used in non-volatile memories with floating gates for limiting the programming voltage. The minimum thickness of the gate oxide, however, is bound to certain limits in conventional memories because, if the oxide thickness is too small, the loss of charge from a programmed cell would become too great. The gate oxide is thicker than 7 nm in conventional memories for this reason. A non-volatile memory cell according to the invention comprises a gate oxide 9 with a thickness of no more than approximately 6 nm in combination with a p-type floating gate electrode 8. A lower programming voltage can be used thanks to the thin gate oxide, while a good data retention is maintained. The loss of charge is low because the electrons applied to the floating gate during programming recombine there with holes and are bound to the ionized acceptor atoms at a comparatively great distance from the interface between gate and oxide.
REFERENCES:
patent: 4608585 (1986-08-01), Keshtbod
patent: 5260593 (1993-11-01), Lee
Hardy David
U.S. Philips Corporation
Wieghaus Brian J.
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