Semiconductor device with a metal line and method of forming...

Details Semiconductor device with a metal line and method of forming... Semiconductor device with a metal line and method of forming...

2005-12-16

2009-11-17

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S636000, C438S640000, C438S678000, C438S687000, C438S704000, C257SE21171, C257SE21179, C257SE21252, C257SE21579, C257SE21586, C257SE23145

Reexamination Certificate

active

07618887

ABSTRACT:
A method of forming a metal line in a semiconductor device including forming a first insulation layer and a first etch stop layer on a conductive layer, and forming a first photosensitive layer pattern on the first etch stop layer; forming a first opening by etching the first etch stop layer; forming a second insulation layer and a second etch stop layer on the first insulation layer and the first etch stop layer, and forming a second photosensitive layer pattern on the second etch stop layer; forming a second opening by etching the second etch stop layer; simultaneously forming an inter-connection groove and a via hole by etching the first insulation layer and the second insulation layer using the second etch stop layer and the first etch stop layer as a mask; and forming a metal line by filling the inter-connection groove and the via hole with conductive materials.

REFERENCES:
patent: 6037664 (2000-03-01), Zhao et al.
patent: 6153514 (2000-11-01), Wang et al.
patent: 6211069 (2001-04-01), Hu et al.
patent: 6284657 (2001-09-01), Chooi et al.
patent: 6489233 (2002-12-01), Chooi et al.
patent: 6492263 (2002-12-01), Peng et al.
patent: 6492270 (2002-12-01), Lou
patent: 6521524 (2003-02-01), Wang et al.
patent: 6686271 (2004-02-01), Raaijmakers et al.
patent: 7119006 (2006-10-01), Kraft
patent: 7271087 (2007-09-01), Chun
patent: 2003/0060037 (2003-03-01), Wu
patent: 2007/0134917 (2007-06-01), Li et al.
patent: 2001-168188 (2001-06-01), None
patent: 2003-31660 (2003-01-01), None
patent: 2001-0017903 (2001-03-01), None

Affiliated with

Also associated with

Rating

Semiconductor device with a metal line and method of forming... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with a metal line and method of forming..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with a metal line and method of forming... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4119854