Semiconductor device with a metal line and method of forming...

Details Semiconductor device with a metal line and method of forming... Semiconductor device with a metal line and method of forming...

2008-05-13

2008-05-13

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S648000, C257S750000, C257S752000, C257S763000

Reexamination Certificate

active

11320397

ABSTRACT:
A method of forming a metal line in a semiconductor device including forming an inter-metal dielectric (IMD) layer on the semiconductor substrate including the predetermined pattern, planarizing the IMD layer through a first CMP process, and patterning a via hole on the planarized substrate. The method further includes depositing a barrier metal layer in the via hole, filling a refractory metal in an upper part of the barrier metal layer, planarizing the substrate filled with the refractory metal by performing a second CMP process, forming a refractory metal oxide layer by oxidizing a residual refractory metal region created by the second CMP process, and forming a refractory metal plug by removing the refractory metal oxide layer through a third CMP process.

REFERENCES:
patent: 6235633 (2001-05-01), Jang
patent: 7229921 (2007-06-01), Hironaga et al.
patent: 2004/0043602 (2004-03-01), Wada et al.

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