Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-10-28
2000-05-09
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257329, 257242, 257197, 257341, H01L 2976, H01L 2994, H01L 31062
Patent
active
060607440
ABSTRACT:
In a current detecting cell of a MOS-type semiconductor device with a current detection function, the area of the contact portions of source regions which contact a current detecting electrode is greater than that of that contact portion of a base region which contacts the current detecting electrode. With this feature, a parasitic resistance does no sharply decrease even if a detected voltage increases, and therefore, current can be detected accurately.
REFERENCES:
patent: 4809045 (1989-02-01), Yilmaz
patent: 5821580 (1998-10-01), Kuwahara
Kamata Shuji
Kuwahara Masashi
Kabushiki Kaisha Toshiba
Saadat Mahshid
Warren Matthew E.
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