Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2007-03-20
2007-03-20
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S622000, C438S637000, C438S638000, C438S696000
Reexamination Certificate
active
11148307
ABSTRACT:
A semiconductor device includes an interlayer insulation film, an underlying line provided in the interlayer insulation film, a liner film overlying the interlayer insulation film, an interlayer insulation film overlying the liner film. The underlying line has a lower hole and the liner film and the interlayer insulation film have an upper hole communicating with the lower hole, and the lower hole is larger in diameter than the upper hole. The semiconductor device further includes a conductive film provided at an internal wall surface of the lower hole, a barrier metal provided along an internal wall surface of the upper hole, and a Cu film filling the upper and lower holes. The conductive film contains a substance identical to a substance of the barrier metal. A highly reliable semiconductor device can thus be obtained.
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T.J. Dalton, et al., “A 90nm Dual Damascene Hybrid (Organic/Inorganic) Low-k-Copper BEOL Intergration Scheme”, Advanced Metallization Conference 2003, Materials Research Society, 2004, pp. 85-89.
Maekawa Kazuyoshi
Mori Ken-ichi
Au Bac H.
Renesas Technology Corp.
Smith Zandra V.
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