Semiconductor device with a gettering sink material layer

Details Semiconductor device with a gettering sink material layer Semiconductor device with a gettering sink material layer

1993-02-19

1994-12-20

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

257629, 257913, 437 12, H01L 21322

Patent

active

053748425

ABSTRACT:
Silicon substrate is provided with silicon single-crystalline wafer, natural oxide film and poly-crystalline silicon film. The thickness of natural oxide film is controlled to be less than 10 .ANG.. Since the thickness of natural oxide film is made less than 10 .ANG., heavy metals travel smoothly from silicon single-crystalline wafer to poly-crystalline silicon film in the process of gettering. In other words, it is possible to enhance gettering effect.

REFERENCES:
patent: 4053335 (1977-10-01), Hu

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