Semiconductor device with a gate electrode including a pair...

Details Semiconductor device with a gate electrode including a pair... Semiconductor device with a gate electrode including a pair...

2005-10-07

2009-06-02

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S332000, C257S333000, C257S334000, C257SE29201

Reexamination Certificate

active

07541642

ABSTRACT:
A semiconductor device comprises a semiconductor substrate having a gate trench formed therein. A gate electrode is formed on a gate insulator in the gate trench. The gate electrode has ends close to the bottom of the gate trench, which are separated in a direction perpendicular to both sides of the gate trench, and portions except the separated ends, at least part of which is made higher in conductivity than other parts.

REFERENCES:
patent: 6323090 (2001-11-01), Zommer
patent: 6979865 (2005-12-01), Peake et al.
patent: 7045858 (2006-05-01), Matsuda et al.
patent: 2003/0146470 (2003-08-01), Hijzen et al.
patent: 2005/0191810 (2005-09-01), Matsuda et al.
patent: 2005/0199953 (2005-09-01), Kawamura et al.
patent: 2006/0049453 (2006-03-01), Schmitz et al.
patent: 2006/0151828 (2006-07-01), Takemori et al.
patent: 11-163342 (1999-06-01), None

Affiliated with

Also associated with

Rating

Semiconductor device with a gate electrode including a pair... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with a gate electrode including a pair..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with a gate electrode including a pair... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4073640