Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Patent
1994-10-13
1997-03-11
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
In integrated circuit
257493, 257495, 257498, 257339, 257212, 257488, H01L 2358
Patent
active
056104324
ABSTRACT:
A semiconductor device of the RESURF type with a "low-side" lateral DMOST (LDMOST), comprising a semiconductor body (1) of predominantly a first conductivity type and a surface region (3) adjoining a surface (2) and of a second conductivity type. The LDMOST comprises a back gate region (5) of the first conductivity type provided in the surface region (3) with a source region (6) of the second conductivity type in the back gate region (5) and a channel region (7) defined between the source region (6) and an edge of the back gate region (5). A drain region (8) of the second conductivity type is present at a distance from the back gate region (5). A separation region (15) of the first conductivity type is provided around the LDMOST in the surface region (3), which separation region adjoins the surface (2) and extends towards the semiconductor body (1). One or several breakdown voltage raising zones (9, 99) of the first conductivity type are provided between the drain region (8) and the back gate region (5) and between the drain region (8) and the separation region (15). The surface (2) is provided with an insulating layer (17) on which a conductor track (25) is provided which is connected to the drain region (8) and which extends over the voltage raising zones (99) and the separation region (15). According to the invention, at least one zone (9A or 5) of the following zones: a zone forming the back gate region (5) and a first breakdown voltage raising zone (9A) lying between the back gate (5) and the drain region (8) and closest to the back gate region (5), is provided with at least one portion (35) projecting towards the other zone, at the area of which the distance between the two zones is smaller than in an adjoining portion of these zones, while the first breakdown voltage raising zone (9A) has no connection to a breakdown voltage raising zone (99) over which the conductor track (25) extends. An exchange of charge between the back gate region (5) and the first breakdown voltage raising zone (9A) may take place through this projecting portion (35), whereby a faster switching of the semiconductor device is facilitated, while a leakage current between back gate/source region (6, 5) and semiconductor body (1) does not occur.
REFERENCES:
patent: 5347155 (1994-09-01), Ludikhuize
"A Versatile 700-1200-V IC Process for Analog and Switching Applications" from IEEE Trans. on Electron Devices, vol. 38, No. 7, Jul. 1991, pp. 1582-1589.
Biren Steven R.
Guay John
Jackson, Jr. Jerome
U.S. Philips Corporation
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