Semiconductor device with a dynamic gate-drain capacitance

Details Semiconductor device with a dynamic gate-drain capacitance Semiconductor device with a dynamic gate-drain capacitance

2011-07-19

2011-07-19

Fahmy, Wael M (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S330000, C257S331000, C257S332000, C257S333000, C257S334000, C257S369000, C257SE29345, C257SE21616

Reexamination Certificate

active

07982253

ABSTRACT:
A semiconductor device with a dynamic gate drain capacitance. One embodiment provides a semiconductor device. The device includes a semiconductor substrate, a field effect transistor structure including a source region, a first body region, a drain region, a gate electrode structure and a gate insulating layer. The gate insulating layer is arranged between the gate electrode structure and the body region. The gate electrode structure and the drain region partially form a capacitor structure including a gate-drain capacitance configured to dynamically change with varying reverse voltages applied between the source and drain regions. The gate-drain capacitance includes at least one local maximum at a given threshold or a plateau-like course at given reverse voltage.

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