Semiconductor device with a copper wires ball bonded to aluminum

Details Semiconductor device with a copper wires ball bonded to aluminum Semiconductor device with a copper wires ball bonded to aluminum

1992-03-17

1993-07-20

LaRoche, Eugene R.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Die bond

257783, 257784, 257771, H01L 2348, H01L 2330

Patent

active

052296466

ABSTRACT:
A semiconductor device formed by a semiconductor chip bonded to a lead frame die pad. The bonding material, such as a silicone resin, has an elasticity modulus ranging from 1 Kg/cm.sup.2 to 100 Kg/cm.sup.2 from room temperature to 400.degree. C. The lead frame electrodes are connected to the semiconductor chip electrodes by copper alloy wires.

REFERENCES:
patent: 3125803 (1964-03-01), Rich
patent: 3790866 (1974-02-01), Meyer et al.
patent: 4139726 (1979-02-01), Penrod et al.
patent: 4821148 (1989-04-01), Kobayashi et al.
patent: 4821944 (1989-04-01), Tsumura
patent: 4842662 (1989-06-01), Jacobi
patent: 4891333 (1990-01-01), Baba et al.
patent: 5023697 (1991-06-01), Tsumura
patent: 5116783 (1992-05-01), Tsumura
Chemical Abstracts 108(16):141335y and 108(10):85976y.
Tsumura, "Fundamental Study of the Copper Wire Ball Bonding Technology and Its Reliability", IMC 1988 Proceedings, pp. 388-392.

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