Semiconductor device with a copper barrier layer and formation t

Details Semiconductor device with a copper barrier layer and formation t Semiconductor device with a copper barrier layer and formation t

1998-03-20

2000-07-25

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257740, 257741, 257750, 257757, 257762, 257768, 438595, 438627, 438643, 438653, 438682, 438687, H01L 2972

Patent

active

060939664

ABSTRACT:
A method of forming a semiconductor device by first providing a substrate in a processing chamber. The substrate has an insulating layer and an opening in the insulating layer. A copper barrier layer is formed on the insulating layer and in the opening by providing a plurality of refractory metal atoms and a plurality of silicon atoms in the processing chamber. The atoms are ionized by applying a first bias to the atoms to form a plasma. The substrate is then biased by a first stage bias followed by a second stage bias to accelerate the plasma to the substrate to form the copper barrier layer, where the first stage bias is less than the second stage bias. The copper-containing metal is then deposited on the copper barrier layer over the insulating layer and in the opening. The present invention further includes a semiconductor device formed by the above method.

REFERENCES:
patent: 5178739 (1993-01-01), Barnes et al.
patent: 5431016 (1995-07-01), Simpkin
patent: 5431799 (1995-07-01), Mosely et al.
patent: 5449955 (1995-09-01), Debiec et al.
patent: 5614437 (1997-03-01), Choudhury
"Metal Ion Deposition From Ionized Mangetron Sputtering Discharge," Rossnagel, et al.; J. Vac. Sci. Technol. B 12(1), Jan./Feb. 1994; pp. 449-453.
"Filling Dual Damascene Interconnect Structures With AICu and Cu Using Ionized Magnetron Deposition," Rossnagel; J. Vac. Sci. Technol. B 13(1), Jan./Feb. 1995; pp. 125-129.
"Simulations of Trench-Filling Profiles Under Ionized Magnetron Sputter Metal Deposition," Hamaguchi, et al., Mar. 20, 1998.

Affiliated with

Also associated with

Rating

Semiconductor device with a copper barrier layer and formation t does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with a copper barrier layer and formation t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with a copper barrier layer and formation t will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1338458