Semiconductor device with a charge carrier compensation...

Details Semiconductor device with a charge carrier compensation... Semiconductor device with a charge carrier compensation...

2011-07-05

2011-07-05

Cao, Phat X (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257SE29256

Reexamination Certificate

active

07973359

ABSTRACT:
A semiconductor device with a charge carrier compensation structure. In one embodiment, the semiconductor device has a central cell field with a gate and source structure. At least one bond contact area is electrically coupled to the gate structure or the source structure. A capacitance-increasing field plate is electrically coupled to at least one of the near-surface bond contact areas.

REFERENCES:
patent: 6747315 (2004-06-01), Sakamoto
patent: 2001/0028083 (2001-10-01), Onishi et al.
patent: 2005/0012144 (2005-01-01), Shirai et al.

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