Semiconductor device wherein one of capacitor electrodes compris

Details Semiconductor device wherein one of capacitor electrodes compris Semiconductor device wherein one of capacitor electrodes compris

1996-09-24

1998-05-19

Whitehead, Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257300, 257303, 257304, 257307, H01L 27108, H01L 2976

Patent

active

057539499

ABSTRACT:
Used nearer to a MOS transistor (25, 29(1), 29(2)) together with another capacitor electrode (39) with a dielectric film (37) interposed for use in a DRAM, a capacitor electrode comprises a conductor pole (53) and a conductor layer (55) which is held by the conductor pole and comprises a plate portion (57) extended perpendicular to a pole axis and having a plate periphery and a peripheral portion (59) extended parallel to the pole axis from the plate periphery towards a pole end. Preferably, the conductor layer is held by the pole on a plurality of levels. A planar conductor layer may additionally be held at the pole end perpendicular to the pole axis. Word (41) and bit (49) lines are embedded in an insulator layer (43, 51) for the capacitor and the transistor.

REFERENCES:
patent: 5595928 (1997-01-01), Lu et al.
patent: 5643819 (1997-07-01), Tseng
Patent Abstracts of Japan, vol. 18, No. 255, May 16, 1994 (corresponds to JPA 06-037271).
IEEE Transactions on Electron Devices, vol. 42, No. 7, Jul. 1995, New York, pp. 1247-1253, Hirohito Watanabe et al., "Hemispherical Grained Si Formation on in-situ Phosphorous Doped Amorphous-Si Electrode for 256Mb DRAM's Capacitor".

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