Semiconductor device wherein n-channel MOSFET, p-channel MOSFET

Details Semiconductor device wherein n-channel MOSFET, p-channel MOSFET Semiconductor device wherein n-channel MOSFET, p-channel MOSFET

1993-04-06

1994-06-14

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257326, 257371, 257377, H01L 2702

Patent

active

053212878

ABSTRACT:
An n-channel MOSFET, a p-channel MOSFET and a nonvolatile memory cell are provided for the same semiconductor substrate. The nonvolatile memory cell is formed on the semiconductor substrate, the n-channel MOSFET is formed in a p-type well region of the semiconductor substrate, and the p-channel MOSFET is formed in an n-type well region of the semiconductor substrate.

REFERENCES:
patent: 4893164 (1990-01-01), Shirato
patent: 5223451 (1993-06-01), Uemura et al.
Electrical Design News, vol. 30, No. 25, pp. 145-152, 154, D. Cormier: "Erasable/Programmable Solid-State Memories" (Nov., 1985).
Electronics, vol. 61, No. 10, pp. 70-71, "TI's Erasable PLDs Are Fast But Don't Need Much Power" (May 12, 1988).
Electronic Design, vol. 31, No. 20, pp. 44, 46, "FLSI Process Advances Herald The Coming Of Superfast Computers" (Sep., 1983).

Affiliated with

Also associated with

Rating

Semiconductor device wherein n-channel MOSFET, p-channel MOSFET does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device wherein n-channel MOSFET, p-channel MOSFET , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device wherein n-channel MOSFET, p-channel MOSFET will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1251297