Semiconductor device utilizing a metal gate material such as...

Details Semiconductor device utilizing a metal gate material such as... Semiconductor device utilizing a metal gate material such as...

2011-01-11

2011-01-11

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S270000, C438S282000, C257SE21655, C257SE21428

Reexamination Certificate

active

07867833

ABSTRACT:
Known drawbacks associated with use of tungsten as a gate material in a semiconductor device are prevented. A gate oxide layer, a polysilicon layer, and a nitride layer are sequentially formed on a semiconductor substrate having a isolation layer for defining the active region. A groove is formed by etching the nitride layer. A metal nitride layer is formed to an U shape in the groove, and then a metal layer is formed to bury the groove. A hard mask layer is formed for defining a gate forming region on the nitride layer, the metal nitride layer, and the metal layer. A metal gate is formed by etching the nitride layer, the polysilicon layer, and the gate oxide layer using the hard mask layer as an etch barrier.

REFERENCES:
patent: 7553737 (2009-06-01), Huang et al.
patent: 7659572 (2010-02-01), Kim
patent: 2004/0135176 (2004-07-01), Kim
patent: 2005/0106820 (2005-05-01), Tran
patent: 2010/0044797 (2010-02-01), Lee

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