Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2006-02-21
2006-02-21
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S081000, C257S082000, C257S084000, C257S091000, C257S100000
Reexamination Certificate
active
07002185
ABSTRACT:
A semiconductor chip1is provided with a first electrode2formed at a first corner of a crystal substrate1agenerally quadrangular as viewed in plan, and with a second electrode3formed to extend along two sides of the crystal substrate1a, these sides including between them a second corner located diagonally away from the first corner. The first electrode2and the second electrode3are connected to a first lead15and second leads16a, 16bformed on the circuit substrate10via solder paste20. The narrow first lead15extends transversely to a side of the crystal substrate1a, and the second leads16a, 16bextends in the opposite direction to that of the first lead15. The first lead15and the second lead16bare offset from each other by an appropriate distance. With such arrangements, the surface tension of melted solder prevents the semiconductor chip1from being fixed to the circuit substrate10with a slanting posture.
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Clark Jasmine
Hamre Schumann Mueller & Larson P.C.
Rohm & Co., Ltd.
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