Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-08-04
2008-10-21
Ngo, Ngan (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S239000, C438S241000, C438S243000, C257SE21008, C257SE21396, C257SE21647
Reexamination Certificate
active
07439112
ABSTRACT:
A semiconductor device manufacturing method includes selectively removing portions of a buried oxide layer and first semiconductor layer in an SOI substrate having the first semiconductor layer formed above a semiconductor substrate with the buried oxide layer disposed therebetween and exposing part of the semiconductor substrate, removing an exposed region of the semiconductor substrate in a depth direction, and burying a second semiconductor region in the region from which part of the semiconductor substrate has been removed in the depth direction.
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Nagano Hajime
Nitta Shinichi
Oyamatsu Hisato
Kabushiki Kaisha Toshiba
Ngo Ngan
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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