Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-09-26
2011-11-29
Smoot, Stephen W (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S623000, C438S656000, C257SE21579
Reexamination Certificate
active
08067309
ABSTRACT:
A first insulating film is formed on a semiconductor substrate. A second insulating film made of insulating metal nitride is formed on the first insulating film. A recess is formed through the second insulating film and reaches a position deeper than an upper surface of the first insulating film. A conductive member is buried in the recess. A semiconductor device is provided whose interlayer insulating film can be worked easily even if it is made to have a low dielectric constant.
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Kondo Hiroki
Nakao Yoshiyuki
Nishikawa Nobuyuki
Shimizu Noriyoshi
Suzuki Takashi
Booker Vicki B
Fujitsu Semiconductor Limited
Smoot Stephen W
Westerman Hattori Daniels & Adrian LLP
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