Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-29
2006-08-29
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S295000, C257S301000, C257S302000, C257S303000, C257S304000, C257S306000, C257S307000, C257S308000, C257S309000, C257S310000, C257S752000, C257S759000, C257S760000, C257S774000
Reexamination Certificate
active
07098497
ABSTRACT:
A semiconductor device includes a MOS transistor, interlayer dielectric film, first and second high-dielectric-constant films, and first and second conductive films. The MOS transistor is formed on a semiconductor substrate. The interlayer dielectric film is formed on the semiconductor substrate so as to cover the MOS transistor. The first high-dielectric-constant film is formed on the interlayer dielectric film and has an opening portion that reaches the interlayer dielectric film. The first conductive film contains a metal element and is formed to be partially embedded in the opening portion. The second high-dielectric-constant film is formed on the first conductive film. The second conductive film is formed on the second high-dielectric-constant film.
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Hogan & Hartson LLP
Kabushiki Kaisha Toshiba
Soward Ida M.
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