Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-03-21
2006-03-21
Guerrero, Maria F. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S612000, C438S614000, C438S118000
Reexamination Certificate
active
07015131
ABSTRACT:
A semiconductor device able to maintain a bonding state between a bump and an electrode and having high reliability even under thermal stress, wherein a sealing resin is interposed to bond the electrodes and bumps between a wiring board formed with a plurality of electrodes and an IC chip formed with a plurality of bumps, the bumps being formed under the condition that the following formula is satisfied.in-line-formulae description="In-line Formulae" end="lead"?100<((ΦA×F)/H)<125in-line-formulae description="In-line Formulae" end="tail"?where ΦA represents the top diameter of a bump bonded with an electrode, H the height of a bump projecting from the IC chip and bonded with an electrode, and F the linear thermal expansion coefficient of the sealing resin.
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Yamakawa Hiroyuki et al. (JP 07-066326) (Translation), Mar. 10, 1995.
Honda Noriyuki
Iwatsu Satoshi
Depke Robert J.
Guerrero Maria F.
Sony Corporation
Trexler, Bushnell, Giangiori, Blackstone & Marr, Ltd.
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