Semiconductor device using boosted signal

Details Semiconductor device using boosted signal Semiconductor device using boosted signal

1994-05-26

1995-05-02

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

365194, 36523003, G11C 700

Patent

active

054126045

ABSTRACT:
A level converting unit outputs a signal at a ground potential GND or at a boosted power supply voltage V.sub.PP level in response to a control signal. In response to a control signal BLIM, a first level selecting unit outputs a signal at the ground potential GND or at a power supply voltage V.sub.CC level. A second level selecting unit outputs a predetermined signal from a signal at the boosted voltage V.sub.PP level of the level converting unit, a signal at the ground potential GND of the first level selecting unit, and a signal at the power supply voltage V.sub.CC level as a shared sense amplifier control signal in response to each above-described control signal. As a result, when the shared sense amplifier control signal is pulled up to the boosted voltage V.sub.PP level, it is possible to pull up the shared sense amplifier control signal to the power supply voltage V.sub.CC level, and then to the boosted voltage V.sub.PP level.

REFERENCES:
patent: 4533843 (1985-08-01), McAlexander, III et al.
patent: 5016224 (1991-05-01), Tanaka et al.
patent: 5021998 (1991-06-01), Suzuki et al.
patent: 5056062 (1991-10-01), Kuwabara et al.
patent: 5058063 (1993-10-01), Wada et al.
A 35ns 64 Mb Dram Using On-Chip Boosted Power Supply, Dong-Jae Lee et al., 1992 Symposium on VLSI Circuits Digest of Technical Papers, 1992 IEEE.
Variable VCC Design Techniques For Battery Operated Drams, Seung-Moon Yoo et al., 1992 Symposium on VLSI Circuits Digest of Technical Papers.

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