Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-17
2007-07-17
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S297000, C257S298000, C257S299000, C257S300000, C257S302000, C257S303000, C257S304000, C257S305000, C257S306000, C257S307000, C257S308000, C257S309000, C257S310000, C257S311000, C257S312000, C257S313000
Reexamination Certificate
active
11487969
ABSTRACT:
A semiconductor device has a capacitive element including a first conductive film formed on the bottom and wall surfaces of an opening formed in an insulating film on a substrate, a dielectric film formed on the first conductive film, and a second conductive film formed on the dielectric film. The dielectric film of the capacitive element is crystallized. The first and second conductive films are made of a polycrystal of an oxide, a nitride or an oxynitride of a noble metal.
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Hayashi Shinichiro
Natsume Shinya
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Soward Ida M.
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