Semiconductor device that is advantageous in complex stress...

Details Semiconductor device that is advantageous in complex stress... Semiconductor device that is advantageous in complex stress...

2007-01-17

2008-11-18

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S194000, C257S018000, C257SE27006

Reexamination Certificate

active

07453108

ABSTRACT:
A semiconductor device according to an embodiment includes an insulated-gate field-effect transistor including a gate insulation film provided on a major surface of a semiconductor substrate, a gate electrode provided on the gate insulation film, and a source and a drain provided spaced apart in the semiconductor substrate such that the gate electrode is interposed between the source and the drain, a first contact wiring line which is provided on the source, a second contact wiring line which is provided on the drain, and a piezoelectric layer which is provided to cover the gate electrode and has one end and the other end connected between the first and second contact wiring lines.

REFERENCES:
patent: 2006/0237711 (2006-10-01), Teraguchi
patent: 06-232170 (1994-08-01), None
Xiaobing Ren, “Large electric-field-induced strain in ferroelectric crystals by point-defect-mediated reversible domain switching”, Nature Materials, vol. 3, Feb. 2004, 15 pages.

Affiliated with

Also associated with

Rating

Semiconductor device that is advantageous in complex stress... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device that is advantageous in complex stress..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device that is advantageous in complex stress... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4041607