Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Containing germanium – ge
Reexamination Certificate
2006-04-18
2006-04-18
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Including semiconductor material other than silicon or...
Containing germanium, ge
C257S613000
Reexamination Certificate
active
07030465
ABSTRACT:
The semiconductor device comprises a 2–6 nm-thickness channel layer18of SiGe formed over a silicon substrate10; a gate electrode22formed over the channel layer18with a gate insulation film20formed therebetween; and a source/drain diffused layer32formed on both sides of the gate electrode22. The thickness of the channel layer is set to be as thin as 2–6 nm, whereby the quantum confining effect can be caused in the channel layer. Accordingly, the effective band gap Egof the channel layer can be large. The effective band gap Egof the channel layer can be large, whereby the OFF-state current Ioffcan be decreased. Furthermore, the concentration of a dopant impurity to be implanted into the channel layer does not have to be high, and accordingly the electric fields vertical to the substrate surface never become strong. The scattering increase of the carriers in the interface between the channel layer and the gate insulation film can be accordingly suppressed. The concentration of a dopant impurity to be implanted into the channel layer does not have to be high, and the junction capacitance increase never takes place. Furthermore, a compression strain is implanted in the channel layer of SiGe, whereby the carrier mobility can be increased. Thus, the carrier mobility can be increased without the OFF-state current increase the ON-state current decrease and the junction capacitance increase. Thus, the operation speed can be increased without the OFF-state current increase and the ON-state current decrease.
REFERENCES:
patent: 4080719 (1978-03-01), Wilting
patent: 6544854 (2003-04-01), Puchner et al.
patent: 6815279 (2004-11-01), Yagishita et al.
patent: 2002-76347 (2002-03-01), None
Flynn Nathan J.
Fujitsu Limited
Quinto Kevin
Westerman Hattori Daniels & Adrian LLP
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