Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-05
2006-09-05
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S306000, C257S310000, C257SE27084, C438S240000, C438S253000
Reexamination Certificate
active
07102189
ABSTRACT:
A tight contact layer is disposed on a semiconductor substrate, the tight contact layer being made of one material selected from the group consisting of refractory metal, alloy of refractory metal, nitride of refractory metal, and siliconized nitride of refractory metal. An oxide surface layer is disposed on the surface of the tight contact layer, the oxide surface layer being made of oxide of material constituting the tight contact layer. A first conductive layer is disposed on the surface of the oxide surface layer, the first conductive layer being made of a platinum group or alloy which contains a platinum group. When a conductive layer made of metal such as a platinum group is formed on a tight contact layer, coverage and morphology can be prevented from being degraded.
REFERENCES:
patent: 5858851 (1999-01-01), Yamagata et al.
patent: 6429088 (2002-08-01), Lau
patent: 6559499 (2003-05-01), Alers et al.
patent: 6576948 (2003-06-01), Hofmann et al.
patent: 6627938 (2003-09-01), Kwok et al.
patent: 6727140 (2004-04-01), Basceri et al.
patent: 2001/0002053 (2001-05-01), Kwok et al.
patent: 2004/0063275 (2004-04-01), Kim et al.
patent: 05-067792 (1993-03-01), None
patent: 7-297364 (1995-11-01), None
patent: 08-186236 (1996-07-01), None
patent: 8-335679 (1996-12-01), None
patent: 8-340091 (1996-12-01), None
patent: 09-260600 (1997-03-01), None
patent: 2002-057306 (2002-02-01), None
Japanese Office Action dated Sep. 20, 2005.
Minakata Hiroshi
Nishikawa Nobuyuki
Tsunoda Kouji
Yoshida Eiji
Fujitsu Limited
Westernan, Hattori, Daniels & Adrian,LLP.
Wilson Allan R.
LandOfFree
Semiconductor device suitable for forming conductive film... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device suitable for forming conductive film..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device suitable for forming conductive film... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3542017