Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1993-01-28
1994-01-11
Hearn, Brian E.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
437 62, 437 71, 437974, 148DIG12, 148DIG135, H01L 21306
Patent
active
052777480
ABSTRACT:
A process for preparing a semiconductor device substrate comprises a step of making at least one surface of a first substrate composed of Si material porous, a step of oxidizing inside walls of pores in the resulting porous Si surface layer, a step of forming a monocrystalline Si layer on the porous Si surface layer, a step of bonding the monocrystalline Si layer to one surface of a second substrate through an insulating layer therebetween, a first etching step of removing the first substrate by selective etching except for the porous Si layer, and a second etching step of impregnating the porous Si layer exposed by the removal of the first substrate with hydrofluoric acid or a first liquid mixture of hydrofluoric acid and at least one of an alcohol and a hydrogen peroxide solution, or by buffered hydrofluoric acid or a second liquid mixture of bufffered hydrofluoric acid and at least one of an alcohol and an hydrogen peroxide solution, thereby selectively removing the porous Si layer.
REFERENCES:
patent: 4393577 (1983-07-01), Imai
patent: 4532700 (1985-08-01), Kinney et al.
patent: 4628591 (1986-12-01), Zorinsky et al.
patent: 4910165 (1990-03-01), Lee et al.
patent: 5013681 (1991-05-01), Godbey et al.
patent: 5094697 (1992-03-01), Takabayashi et al.
"A New Dielectric Isolation Method using Porous Silicon" by K. Imai; Solid-State Electronics; vol. 24, 1981; pp. 159-164.
"Formation Mechanism of Porous Silicon Layer by Anodization in HF Solution" by T. Unagami; Journal of the Electrochemical Society; vol. 127 No. 2; Feb. 1980; pp. 476-483.
"Complete dielectric isolation by highly selective and self-stopping formation of oxidized porous silicon" by R. P. Holmstrom et al.; Applied Physics Letters; Feb. 15, 1983, vol. 42; No. 4; pp. 386-388.
"Electrolytic Shaping of Germanium and Silicon" by A. Uhlir, Jr.; Technical Journal; vol. XXXV; 1956; pp. 332-346.
"Pore Size Distribution in Porous Silicon Studied by Adsorption Isotherms" by G. Bomchil et al.; Journal of the Electrochemical Society; vol. 130, No. 7, Jul. 1983; pp. 1612-1614.
"Singly-Crystal silicon on Non-single-Crystal Insulators" by G. W. Cullen; Journal of Crystal Growth; vol. 63, No. 3; Oct. 11, 1983; pp. 429-590 and introduction.
Sakaguchi Kiyofumi
Yonehara Takao
Canon Kabushiki Kaisha
Dang Trung
Hearn Brian E.
LandOfFree
Semiconductor device substrate and process for preparing the sam does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device substrate and process for preparing the sam, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device substrate and process for preparing the sam will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1628592