Semiconductor device structure for reducing hot carrier...

Details Semiconductor device structure for reducing hot carrier... Semiconductor device structure for reducing hot carrier...

2005-04-27

2009-10-13

Lindsay, Jr., Walter L (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S410000, C257S411000, C257SE21029, C257SE21035

Reexamination Certificate

active

07602003

ABSTRACT:
A semiconductor device structure is described, including a MOS transistor, a silicon-rich silicon nitride layer having a refractive index of about 2.00-2.30, and a dielectric layer. The silicon-rich silicon nitride layer is disposed between the MOS transistor and the dielectric layer, and covers the source/drain region, the spacer and the gate conductor of the MOS transistor.

REFERENCES:
patent: 6025267 (2000-02-01), Pey et al.
patent: 6268624 (2001-07-01), Sobek et al.
patent: 7060554 (2006-06-01), Ngo et al.
patent: 2005/0179115 (2005-08-01), Rossi et al.

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