Semiconductor device structure and processing

Stock material or miscellaneous articles – Structurally defined web or sheet – Including aperture

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428700, 428446, 428210, B32B 314, B44C 122, C03C 2506

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active

046831592

ABSTRACT:
An composite semiconductor device and a method of making is described. The device includes a semiconductor body with a first surface having a predetermined orientation with respect to a crystalline structure in the semiconductor body and a layer of thin film material covering at least a portion of the first surface. A depression formed in the first surface of the body with the layer of thin film material defines one or more members which have a predetermined configuration bridging the depression. First and second openings in the thin film layer flank each member such that an anisotropic etch placed on the openings undercuts the member to form the depression in a manner which substantially prevents undercutting of the semiconductor body below the thin film material at the boundaries of the predetermined configuration.

REFERENCES:
patent: 4343768 (1982-08-01), Kimura
patent: 4472239 (1984-09-01), Johnson et al.
Bean, Kenneth "Anisotropic Etching of Silicon" in IEEE Trans. on Elec. Devices, vol. Ed-25, #10, 10/78, pp. 1185-1193.
Seidel et al "Studies on the Anisotrophy and Selectivity of Echants used for the Stress-Free Structures" in the Electrochemical Soc. Extended Abst. 5/82, pp. 194-195.
Siedel et al "Three Dimensional Structuring of Silicon for Sensor Applications" in Sensors & Actuators Journal, pp. 455-463.

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