Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-17
2010-11-02
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S306000, C257SE27104, C257S278000, C257S758000, C257S774000, C257SE21008, C257SE29342, C438S003000
Reexamination Certificate
active
07825446
ABSTRACT:
There is provided a semiconductor device including, a semiconductor substrate having a circuit forming region and a peripheral region, a base insulating film formed over the semiconductor substrate, a capacitor formed of a lower electrode, a capacitor dielectric film made of a ferroelectric material, and an upper electrode in this order over the base insulating film in the circuit forming region, an uppermost interlayer insulating film formed over the capacitor, a seal ring formed over the semiconductor substrate in the peripheral region, the seal ring having a height that reaches at least the upper surface of the interlayer insulating film, and surrounding the circuit forming region, a block film formed over the seal ring and over the interlayer insulating film in the circumference of the seal ring, and an electrode conductor pattern which is formed over the interlayer insulating film in the peripheral region, the electrode conductor pattern having an electrode pad, and having a cross-section exposed to a dicing surface.
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International Search Report of PCT/JP2006/300614, date of mailing Feb. 28, 2006.
Kajio Kenichiro
Takahashi Yasufumi
Armand Marc
Fahmy Wael M
Fujitsu Patent Center
Fujitsu Semiconductor Limited
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