Semiconductor device sealed with molded resin

Details Semiconductor device sealed with molded resin Semiconductor device sealed with molded resin

1996-04-16

1998-02-10

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257790, 257792, 257635, 257642, H01L 2980, H01L 2358, H01L 329

Patent

active

057172323

ABSTRACT:
A semiconductor device has an active layer formed on a semiconductor substrate with different types of junctions, a source region, a drain region, a T-shaped gate electrode in which the cross-sectional area of the upper surface is larger than that of the lower surface, a first dielectric layer covering at least the exposed surface of the active layer, and the gate electrode, and a second dielectric layer enclosing the first dielectric layer. In the device, when the specific inductive capacities of the first and second dielectric layers are .epsilon.(1) and .epsilon.(2) respectively .epsilon.(1)<.epsilon.(2) and the water absorption ratio of the first dielectric layer is greater than the water absorption ratio of the second dielectric layer.

REFERENCES:
patent: 4679311 (1987-07-01), Lakhani et al.
patent: 4829347 (1989-05-01), Cheng et al.
patent: 4845534 (1989-07-01), Fukuta
patent: 4977100 (1990-12-01), Shimura
patent: 5276414 (1994-01-01), Fujimoto et al.
"Electronic Packaging & Interconnection Handbook", pp. 1.16 and 1.36; C. Harper.

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