Semiconductor device sealed with mold resin

Details Semiconductor device sealed with mold resin Semiconductor device sealed with mold resin

1991-09-30

1994-01-11

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Encapsulated

With specified encapsulant

257791, 525477, H01L 2328

Patent

active

052784517

ABSTRACT:
A semiconductor device sealed with mold resin is disclosed. The device includes a semiconductor substrate having a main surface and an element formed on the main surface of the semiconductor substrate. A stress buffering film for protecting at least the element from stress of the mold resin is provided on the semiconductor substrate so as to cover at least the element. The entire semiconductor device is covered and sealed with mold resin. The stress buffering film is formed of organo-silicone ladder polymer having a hydroxyl group at its end. In the semiconductor device, water does not get into an interface of the stress buffering film and the underlying substrate, resulting in an enhancement of the moisture resistance of the semiconductor device.

REFERENCES:
patent: 3975757 (1976-08-01), Spork
patent: 4395527 (1983-07-01), Berger
patent: 4645688 (1987-02-01), Makino et al.
patent: 5030699 (1991-07-01), Motoyama
Japanese Abstract 63 120 774 to Mitsubishi Denki KK, May 25, 1988.
Japanese Abstract 60 229 945 to Fuhitsu KK, Nov. 15, 1985.
Japanese Abstract 86 026 6212 to Mitsubishi Electric, Jul. 11, 1986.
"New Filler-Induced Failure Mechanism in Plastic Encapsulated VLSI Dynamic MOS Memories", Matsumoto et al., Kita-Itami Works and LSI R&D Laboratory, Mitsubishi Electric Corporation, pp. 180-183.

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