Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-02-12
1994-07-19
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257350, 257378, 257612, H01L 29360, H01L 29380, H01L 29730
Patent
active
053311930
ABSTRACT:
A semiconductor substrate allowing prevention of the breakdown voltage degradation of a gate oxide film and having a prescribed mechanical strength in order to cope with increase in the diameters of wafers corresponding to reduction in the dimensions of semiconductor devices and improvement in productivity, and a Bi-CMOS semiconductor device allowing electrical characteristics to be maintained in any of a bipolar transistor and a field effect transistor are provided. An epitaxial layer is formed on a silicon wafer formed by means of CZ method. A silicon wafer formed by means of FZ method is joined onto the epitaxial layer. An npn bipolar transistor is formed in the epitaxial layer. An n channel MOS transistor and a p channel MOS transistor are formed in the silicon wafer.
REFERENCES:
patent: 3920484 (1975-11-01), Ogura et al.
Sze, S. M., Semiconductor Devices, Physics and Technology, John Wiley and Sons, New York, 1985, pp. 301-320.
Takao Abe, "The Present Qualities and Future Issues in Silicon Bulk Crystals and Wafer Surfaces", Advanced Silicon Technology for ULSI I, Shin-Etsu Handotai Co., Ltd. pp. 67, 56-57.
Haroy David B.
Hille Rolf
Mitsubishi Denki & Kabushiki Kaisha
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