Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Field relief electrode
Patent
1994-08-25
1996-07-09
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
Field relief electrode
257459, 257488, H01L 2358
Patent
active
055347266
ABSTRACT:
A semiconductor device where an aluminum electrode surrounds an output electrode of an element, is provide by a detector electrode formed on a ring shaped space between the output electrode and the aluminum electrode. Sliding of the aluminum electrode toward the output electrode which occurs in an aging degradation, is detected by contact between the aluminum electrode and the detector electrode.
REFERENCES:
patent: 4157563 (1979-06-01), Bosselaar
patent: 4931844 (1990-06-01), Zommer
patent: 4962411 (1990-10-01), Tokura et al.
patent: 5034797 (1991-07-01), Yamanaka et al.
patent: 5081510 (1992-01-01), Ohtsuka et al.
Arroyo T. M.
Crane Sara W.
NEC Corporation
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