Semiconductor device provided with semiconductor circuit...

Details Semiconductor device provided with semiconductor circuit... Semiconductor device provided with semiconductor circuit...

2008-01-22

2008-01-22

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S161000, C438S164000, C438S166000

Reexamination Certificate

active

07320905

ABSTRACT:
This invention improves TFT characteristics by making an interface between an active layer, especially a region forming a channel formation region and an insulating film excellent, and provides a semiconductor device provided with a semiconductor circuit made of a semiconductor element having uniform characteristics and a method of fabricating the same. In order to achieve the object, a gate wiring line is formed on a substrate or an under film, a gate insulating film, an initial semiconductor film, and an insulating film are formed into a laminate without exposing them to the atmosphere, and after the initial semiconductor film is crystallized by irradiation of infrared light or ultraviolet light (laser light) through the insulating film, patterning is carried out to obtain an active layer and a protection film each having a desired shape, and then, a resist mask is used to fabricate the semiconductor device provided with an LDD structure.

REFERENCES:
patent: 5286659 (1994-02-01), Mitani et al.
patent: 5342545 (1994-08-01), Yamada et al.
patent: 5385854 (1995-01-01), Batra et al.
patent: 5395804 (1995-03-01), Ueda
patent: 5403762 (1995-04-01), Takemura
patent: 5430320 (1995-07-01), Lee
patent: 5471330 (1995-11-01), Sarma
patent: 5474941 (1995-12-01), Mitani et al.
patent: 5594569 (1997-01-01), Konuma et al.
patent: 5619044 (1997-04-01), Makita et al.
patent: 5641974 (1997-06-01), den Boer et al.
patent: 5763301 (1998-06-01), Rha et al.
patent: 5767531 (1998-06-01), Yoshinouchi
patent: 5780871 (1998-07-01), den Boer et al.
patent: 5804471 (1998-09-01), Yamazaki et al.
patent: 5812137 (1998-09-01), Kerker, Jr. et al.
patent: 5818067 (1998-10-01), Rha et al.
patent: 5834797 (1998-11-01), Yamanaka
patent: 5837619 (1998-11-01), Adachi et al.
patent: 5851860 (1998-12-01), Makita et al.
patent: 5861656 (1999-01-01), Keri
patent: 5872370 (1999-02-01), Gu et al.
patent: 5880018 (1999-03-01), Boeck et al.
patent: 5882165 (1999-03-01), Maydan et al.
patent: 5917564 (1999-06-01), Kim et al.
patent: 5917571 (1999-06-01), Shimada
patent: 5923963 (1999-07-01), Yamanaka
patent: 5923966 (1999-07-01), Teramoto et al.
patent: 5952708 (1999-09-01), Yamazaki
patent: 6011274 (2000-01-01), Gu et al.
patent: 6017779 (2000-01-01), Miyasaka
patent: 6124155 (2000-09-01), Zhang et al.
patent: 6140668 (2000-10-01), Mei et al.
patent: 6143661 (2000-11-01), Kousai et al.
patent: 6144082 (2000-11-01), Yamazaki et al.
patent: 6144426 (2000-11-01), Yamazaki et al.
patent: 6146927 (2000-11-01), Yamanaka
patent: 6147667 (2000-11-01), Yamazaki et al.
patent: 6160268 (2000-12-01), Yamazaki
patent: 6169293 (2001-01-01), Yamazaki
patent: 6177302 (2001-01-01), Yamazaki et al.
patent: 6204519 (2001-03-01), Yamazaki et al.
patent: 6225644 (2001-05-01), Yamaguchi et al.
patent: 6239470 (2001-05-01), Yamazaki
patent: 6246070 (2001-06-01), Yamazaki et al.
patent: 6261877 (2001-07-01), Yamazaki et al.
patent: 6261881 (2001-07-01), Yamazaki et al.
patent: 6329229 (2001-12-01), Yamazaki et al.
patent: 6348369 (2002-02-01), Kusumoto et al.
patent: 6359320 (2002-03-01), Yamazaki et al.
patent: 6362031 (2002-03-01), Yamaguchi et al.
patent: 6380011 (2002-04-01), Yamazaki et al.
patent: 6399454 (2002-06-01), Yamazaki
patent: 6410961 (2002-06-01), Hayashi
patent: 6458635 (2002-10-01), Yamazaki et al.
patent: 6462798 (2002-10-01), Kim et al.
patent: 6482752 (2002-11-01), Yamazaki et al.
patent: 6555422 (2003-04-01), Yamazaki et al.
patent: 6700134 (2004-03-01), Yamazaki et al.
patent: 6737717 (2004-05-01), Yamazaki et al.
patent: 6800875 (2004-10-01), Yamazaki
patent: 6838324 (2005-01-01), Yamazaki et al.
patent: 6867434 (2005-03-01), Yamazaki
patent: 6897100 (2005-05-01), Yamazaki et al.
patent: 6977192 (2005-12-01), Yamazaki et al.
patent: 7097712 (2006-08-01), Yamazaki et al.
patent: 7098088 (2006-08-01), Yamazaki et al.
patent: 2002/0048869 (2002-04-01), Gosain et al.
patent: 2002/0072157 (2002-06-01), Jinno et al.
patent: 2003/0027380 (2003-02-01), Yamazaki
patent: 2005/0082529 (2005-04-01), Yamazaki
patent: 2006/0105514 (2006-05-01), Yamazaki et al.
patent: 2006/0163580 (2006-07-01), Yamazaki et al.
patent: 2006/0263955 (2006-11-01), Yamazaki et al.
patent: 58-105574 (1983-06-01), None
patent: 58-163722 (1983-09-01), None
patent: 61-70780 (1986-04-01), None
patent: 62-104171 (1987-05-01), None
patent: 1-184928 (1989-07-01), None
patent: 2-163972 (1990-06-01), None
patent: 2-201967 (1990-08-01), None
patent: 03-038755 (1991-02-01), None
patent: 4-152624 (1992-05-01), None
patent: 4-206837 (1992-07-01), None
patent: 04-269837 (1992-09-01), None
patent: 5-217891 (1993-08-01), None
patent: 5-315357 (1993-11-01), None
patent: 6-132536 (1994-05-01), None
patent: 07-226515 (1995-08-01), None
patent: 7-273342 (1995-10-01), None
patent: 7-283151 (1995-10-01), None
patent: 8-316489 (1996-11-01), None
patent: 9-18007 (1997-01-01), None
patent: 9-45930 (1997-02-01), None
patent: 9-116156 (1997-05-01), None
patent: 9-197390 (1997-07-01), None
patent: 9-246564 (1997-09-01), None
patent: 10-189446 (1998-07-01), None
patent: 10-209458 (1998-08-01), None
patent: 10-209462 (1998-08-01), None
Hayashi, et al, “Fabrication of Low-Temperature Bottom-Care Poly-Si TFTs on Large-Area Substrate by Linear-Beam Excimer Laser Crystallization and Ion Doping Method,” IDEM 95, pp. 33.3.1-33.3.4 (1995).
Inui, S. et al, “Thresholdless Antiferroelectricity in Liquid Crystals and its Application to Displays,” J. Mater. Chem., vo. 6, No. 4, pp. 671-673, (1996).
Yoshida, T. et al, “A Full Color Thresholdless Antiferroelectric LCD Exhibiting Wide Viewing Angle with Fast Response Time,” SID 97 Digest, pp. 841-844, (1997).
Furue, H. et al, “Characteristics and Driving Scheme of Polymer-Stabilized Monostable FLCD Exhibiting Fast Response Time and High Contrast Ratio with Gray-Scale Capability,” SID 98 Digest, pp. 782-785, (1998).
Pending US Appl. No. 09/377,657 to Yamazaki et al filed Aug. 19, 1999, including specification, claims, abstract, drawings, preliminary amendment A and PTO filing receipt.
Office Action re Japanese application No. JP 11-232400, dated Apr. 24, 2007 (with full English translation).
Wolf, S.,Silicon Processing for the VLSI Era, Vol. 2: Process Integration, Lattice Press, 1990, pp. 273-274, 354, 356-357, 359.
Sano, N. et al, “High Quality SiO/Sub 2//Si Interfaces of Poly-Crystalline Silicon Thin Film Transistors by Annealing in Wet Atmosphere,” IEEE Electron Device Letters, vol. 16, No. 5, May, 1995, pp. 157-160.
Sun, S.C. et al, “Properties of Metalorganic Chemical Vapor Deposited Tantalum Nitride Thin Films,” 4thInternational Conference on Solid-State and Integrated Circuit Technology, Oct. 24-28, 1995, pp. 547-549.
Lan, J-H, et al, “Planarized Copper Gate Hydrogenated Amorphous-Silicon Thin-Film Transistors for AM-LCDs,” 56thAnnual Device Research Conference Digest, Jun. 22-24, 1998, pp. 130-131.
Lim, B.C. et al, “High Performance Amorphous Silicon Thin Film Transistor with Planarized SiNx/BCB Double-Layered gate Insulator,” AM-LCD '98 Digest of technical Papers, Jul. 9, 1998, pp. 73-76.
Jang, J. et al, “32.1: Invited Paper: Amorphous Silicon Thin-Film Transistors with Planarized Gate Insulators,” SID Digest '99: SID International Symposium Digest of Technical Papers, 1999, (4 pages).
Won, S.H. et al, “28.3: A High-Resolution Full Color TFT-LCD on Transparent Plastic,” SID Digest '03: SID International Symposium Digest of Technical Papers, 2003, pp. 992-995.

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