Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold
Patent
1994-03-09
1995-09-12
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
257493, 257505, H01L 2906, H01L 2702
Patent
active
054499461
ABSTRACT:
A semiconductor device is provided in which a contact is very simply formed on conductive material for capacitive coupling prevention. Two silicon substrates are bonded through a silicon oxide film. And a trench extending to the silicon oxide film is formed in one of silicon substrates so as to isolate between plural circuit elements from each other, and islands for circuit element formation are compartmently formed by the trench. A silicon oxide film is formed on an outer periphery portion of the islands for circuit element formation. Furthermore, an island for capacitive coupling prevention is formed by the silicon substrate between the islands for circuit element formation and is applied thereto to be maintained in an electric potential of constant.
REFERENCES:
patent: 3990102 (1976-11-01), Okuhara et al.
patent: 4231056 (1980-10-01), Taylor
patent: 4470062 (1984-09-01), Muramatsu
patent: 4661202 (1987-04-01), Ochii
patent: 5241210 (1993-08-01), Nakagawa et al.
Iida Makio
Miura Shoji
Sakakibara Toshio
Sugisaka Takayuki
Crane Sara W.
Meier Stephen D.
Nippondenso Co. Ltd.
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