Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-04-26
1993-09-28
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257358, 257361, 257384, H01L 2362
Patent
active
052488926
ABSTRACT:
The invention relates to an integrated circuit connected via a first connection conductor (61) to a first contact area. Between the first connection conductor (61) and a second connection conductor (63), a protection element (8) is connected, which protects the circuit especially from electrostatic discharges. The protection element (8) comprises an active zone (81), which is covered with metal silicide (15) and forms a pn junction (86) with the adjoining part (83) of the semiconductor body (10). On the metal silicide (15), the active zone (81) is provided with an electrode (16), through which the zone (81) is connected to the first connection conductor (61). The use of metal silicide in the integrated circuit in itself has great advantages, but in the protection element the metal silicide layer is found to give rise to a considerably lower reliability. The invention has for its object to obviate this disadvantage without it being necessary to modify the manufacturing process. According to the invention, in order to improve the uniformity of the current distribution over the pn junction (86), between the electrode (16) and the pn junction (86), a resistance element (9, 91, 92) is connected in series with the protection element (8) directly to the active zone (81) of the protection element (8), whose width is substantially equal to the width of the active zone (81). Such a resistance element can be entirely realized within the process of manufacturing the integrated circuit.
REFERENCES:
patent: 4492974 (1985-01-01), Yoshida et al.
patent: 4803527 (1989-02-01), Hatta et al.
patent: 4825280 (1989-04-01), Chen et al.
patent: 4845536 (1989-07-01), Heinecke et al.
patent: 4893157 (1990-01-01), Miyazawa et al.
patent: 5019888 (1991-05-01), Scott et al.
de Werdt Reinier
Van Roozendaal Leonardus J.
Dang Hung Xuan
James Andrew J.
Miller Paul R.
U.S. Philips Corporation
LandOfFree
Semiconductor device provided with a protection circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device provided with a protection circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device provided with a protection circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2192755