Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1995-11-21
1998-09-29
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438 50, 438 52, 438 53, 438739, H01L 2144
Patent
active
058145540
ABSTRACT:
A method of manufacturing a semiconductor device is disclosed in which semiconductor switching elements (2) and an integrated microcomponent (3) with a fixed electrode (6) and an electrode (7) which is movable relative to the fixed electrode (6) are provided adjacent a surface of a semiconductor slice (1), which slice (1) is subsequently subdivided into individual semiconductor devices. After the semiconductor switching elements (2) have been provided, metal conductor tracks (20) of a first level are provided on the surface which form the fixed electrode (6) and electrical connections (9), over which an insulating layer (21) and metal conductor tracks (22) of a second level are provided, which form the movable electrode (7) and further electrical connections (8), after which the insulating layer (21) between the fixed (6) and the movable electrode (7) is removed. The semiconductor switching elements (2) are thus manufactured first, after which during the application of the metallization of the device the microcomponent (3) is also manufactured. Since the electrodes (6, 7) of the microcomponent are manufactured by means of conductor tracks (20, 22) at the two metallization levels, it suffices to adapt the metallization stage ("back end") of the manufacturing process only for the creation of a microcomponent (3). A standard process may accordingly be taken for the manufacture of the semiconductor elements (2). The manufacture of the device thereby becomes simpler and cheaper.
REFERENCES:
patent: 4948757 (1990-08-01), Jain et al.
patent: 5262000 (1993-11-01), Welbourn et al.
patent: 5326726 (1994-07-01), Tsang et al.
patent: 5587343 (1996-12-01), Kano et al.
"Silicon Processing for the VLSI Era", vol. II, by S. Wolf, Lattice Press, p. 188 only.
De Samber Mark A.
Peters Wilhelmus
Biren Steven R.
Everhart Caridad
U.S. Philips Corporation
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