Semiconductor device provided by silicon carbide substrate...

Details Semiconductor device provided by silicon carbide substrate... Semiconductor device provided by silicon carbide substrate...

2006-11-09

2009-02-03

Cao, Phat X (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S173000, C438S192000, C257S134000

Reexamination Certificate

active

07485509

ABSTRACT:
A semiconductor device includes a first field effect transistor including a source and a gate and disposed in a silicon carbide substrate; and a second field effect transistor including a drain and a gate and disposed in the substrate. The drain of the second field effect transistor connects to the source of the first field effect transistor. The gate of the second field effect transistor connects to the gate of the first field effect transistor.

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Office Action mailed May 7, 2008 in corresponding Japanese Patent Application No. 2003-035404 (and English translation).
Office Communication issued from Japanese Patent Office dated Sep. 29, 2008 for related Japanese application No. 2003-035404 (a copy of English translation enclosed.)

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