Semiconductor device production method and semiconductor device

Details Semiconductor device production method and semiconductor device Semiconductor device production method and semiconductor device

2006-03-15

2010-06-01

Dang, Trung (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Encapsulated

With specified encapsulant

C438S113000, C438S114000, C438S127000, C257SE21599

Reexamination Certificate

active

07728445

ABSTRACT:
A semiconductor device production method which includes steps of: preparing a wafer on which multiple integrated circuits are formed on a principal face; forming a rewiring which is electrically connected to the integrated circuits via a pad electrode; and dicing the wafer after forming an electrode terminal on the rewiring, including steps of: forming a first resin layer by sealing at least the rewiring and the electrode terminal formed on the principal face of the wafer with a first resin; processing a first dicing from a back face of the wafer to the principal face of the wafer or halfway to the first resin layer when the first resin layer is formed; forming a second resin layer by sealing a cut line outlined upon the first dicing and the back face of the wafer continuously with a first resin; and processing a second dicing while leaving the second resin layer which covers a side face outlined upon the first dicing.

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