Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2011-07-19
2011-07-19
Pham, Thanhha (Department: 2894)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S216000, C438S261000, C257SE21278
Reexamination Certificate
active
07981815
ABSTRACT:
Disclosed is a producing method or a semiconductor device including: loading at least one substrate into a processing chamber; forming a metal oxide film or a silicon oxide film on a surface of the substrate by repeatedly supplying a metal compound or a silicon compound, each of which is a first material, an oxide material which is a second material including an oxygen atom, and a hydride material which is a third material, into the processing chamber predetermined times; and unloading the substrate from the processing chamber.
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Hamada Yoshitaka
Hirahara Kazuhiro
Miya Hironobu
Suda Atsuhiko
Birch & Stewart Kolasch & Birch, LLP
Hitachi Kokusai Electric Inc.
Pham Thanhha
Shin-Etsu Chemical Co. , Ltd.
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