Semiconductor device producing method

Details Semiconductor device producing method Semiconductor device producing method

2010-01-05

2011-11-15

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257SE21240

Reexamination Certificate

active

08058184

ABSTRACT:
Disclosed is a producing method of a semiconductor device, including: loading at least one substrate formed on a surface thereof with a tungsten film into a processing chamber; and forming a silicon oxide film on the surface of the substrate which includes the tungsten film by alternately repeating following steps a plurality of times: supplying the processing chamber with a first reaction material including a silicon atom while heating the substrate at 400° C.; and supplying the processing chamber with hydrogen and water which is a second reaction material while heating the substrate at 400° C. at a ratio of the water with respect to the hydrogen of 2×10−1or lower.

REFERENCES:
patent: 6905939 (2005-06-01), Yuan et al.
patent: 7767594 (2010-08-01), Miya et al.
patent: 2004/0132272 (2004-07-01), Ku et al.
patent: 2005/0110101 (2005-05-01), Kaneko et al.
patent: 2006/0032442 (2006-02-01), Hasebe
patent: 2004-111962 (2004-04-01), None
patent: 2005-079223 (2005-03-01), None
patent: 2005-327836 (2005-11-01), None
patent: 2006-054432 (2006-02-01), None
patent: 2004-25479 (2004-03-01), None
patent: 10-2006-0050163 (2006-05-01), None
Korean Office Action issued Sep. 30, 2009 in counterpart Korean Application No. 10-2007-7030268.

Affiliated with

Also associated with

Rating

Semiconductor device producing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device producing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device producing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4308535