Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2010-01-05
2011-11-15
Garber, Charles (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C257SE21240
Reexamination Certificate
active
08058184
ABSTRACT:
Disclosed is a producing method of a semiconductor device, including: loading at least one substrate formed on a surface thereof with a tungsten film into a processing chamber; and forming a silicon oxide film on the surface of the substrate which includes the tungsten film by alternately repeating following steps a plurality of times: supplying the processing chamber with a first reaction material including a silicon atom while heating the substrate at 400° C.; and supplying the processing chamber with hydrogen and water which is a second reaction material while heating the substrate at 400° C. at a ratio of the water with respect to the hydrogen of 2×10−1or lower.
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Korean Office Action issued Sep. 30, 2009 in counterpart Korean Application No. 10-2007-7030268.
Asai Masayuki
Miya Hironobu
Mizuno Norikazu
Birch & Stewart Kolasch & Birch, LLP
Garber Charles
Hitachi Kokusai Electric Inc.
Patel Reema
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